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STB60NE06L-16 Datasheet

  • STB60NE06L-16

  • N - CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET POWER MOSFET

  • 87.54KB

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STB60NE06L-16
N - CHANNEL 60V - 0.014鈩?- 60A D
2
PAK
STripFET鈩?POWER MOSFET
TYPE
STB60NE06L-16
s
s
s
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.16
鈩?/div>
I
D
60 A
TYPICAL R
DS(on)
= 0.014
鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
LOW THRESHOLD DRIVE
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique 鈥漇ingle Feature Size鈩⑩€?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
D
2
PAK
TO-263
(suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
T
s tg
T
j
May 2000
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
60
60
鹵
15
60
42
240
150
1
1
-65 to 175
175
(
1
) I
SD
鈮?0
A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area

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