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STB60NE06-1 Datasheet

  • STB60NE06-1

  • N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MO...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB60NE06-16
N - CHANNEL ENHANCEMENT MODE
鈥?SINGLE FEATURE SIZE鈩?鈥?POWER MOSFET
TYPE
STB60NE06-1
s
s
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.016
鈩?/div>
I
D
60 A
s
TYPICAL R
DS(on)
= 0.013
鈩?/div>
EXCEPTIONAL dV/dt CAPABILTY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
HIGH dV/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
D
2
PAK
TO-263
(Suffix 鈥漈4鈥?
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique 鈥?Single Feature Size鈩?鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
dV/dt(
1
)
T
stg
T
j
Peak Diode Recovery voltage slope
St orage Temperature
Max. Operating Junction Temperature
o
o
INTERNAL SCHEMATIC DIAGRAM
Value
60
60
鹵
20
60
42
240
150
1
6
-65 to 175
175
(
1
) I
SD
鈮?/div>
60 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/
o
C
V/ ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
January 1998
1/9

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