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STB60NE06-16T4 Datasheet

  • STB60NE06-16T4

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | ...

  • 9頁

  • ETC

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STB60NE06-16
N-CHANNEL 60V - 0.013
鈩?/div>
- 60A D
2
PAK
STripFET鈩?II POWER MOSFET
TYPE
STB60NE06-16
s
s
s
s
s
s
V
DSS
60 V
R
DS(on)
<0.016
鈩?/div>
I
D
60 A
s
TYPICAL R
DS
(on) = 0.013
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
HIGH dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique 鈥漇ingle Feature Size鈩?鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
60
60
鹵
20
60
42
240
150
1
11
400
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limit ed by safe operating area.
March 2002
.
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60A, V
DD
= 25V
1/9

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