鈩?/div>
AVALANCE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
D PAK
TO-263
(Suffix "T4")
2
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size鈩?" strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTER
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
dv/dt
T
stg
T
j
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
鹵
20
60
42
240
100
0.67
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
60 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
July 1998
1/5
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