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STB60NE03L-10T4 Datasheet

  • STB60NE03L-10T4

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | ...

  • 8頁(yè)

  • ETC

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STB60NE03L-10
N - CHANNEL ENHANCEMENT MODE
鈥?SINGLE FEATURE SIZE鈩?鈥?POWER MOSFET
T YPE
ST B60NE03L-10
s
s
s
s
s
V
DSS
30 V
R
DS(o n)
< 0.010
鈩?/div>
I
D
60 A
s
TYPICAL R
DS(on)
= 0.007
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique 鈥漇ingle Feature Size鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
dv/dt
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
D
2
PAK
TO-263
(suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
鹵
15
60
42
240
120
0.8
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
60 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/ C
V/ ns
o
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area
December 1997

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