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STB55NF03LT4 Datasheet

  • STB55NF03LT4

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | ...

  • 159.50KB

  • 11頁

  • ETC

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STP55NF03L
STB55NF03L STB55NF03L-1
N-CHANNEL 30V - 0.01
鈩?/div>
- 55A TO-220/D
2
PAK/I
2
PAK
STripFET鈩?II POWER MOSFET
TYPE
STP55NF03L
STB55NF03L
STB55NF03L-1
s
s
V
DSS
30 V
30 V
30 V
R
DS(on)
<0.013
鈩?/div>
<0.013
鈩?/div>
<0.013
鈩?/div>
I
D
55 A
55 A
55 A
3
1
3
12
s
s
TYPICAL R
DS
(on) = 0.01
鈩?/div>
OPTIMIZED FOR HIGH SWITCHING
OPERATIONS
LOW GATE CHARGE
LOGIC LEVEL GATE DRIVE
D
2
PAK
TO-263
I
2
PAK
TO-262
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique 鈥漇ingle Feature Size鈩?鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
LOW VOLTAGE DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
HIGH EFFICIENCY SWITCHING CIRCUITS
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
stg
T
j
March 2002
.
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵
16
55
39
220
80
0.53
-60 to 175
175
Unit
V
V
V
A
A
A
W
W/擄C
擄C
擄C
1/11
(鈥?
Pulse width limit ed by safe operating area.

STB55NF03LT4 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 16 V

  • 55 A

  • 0.013 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • D2PAK

  • Reel

  • 50 ns

  • 30 S

  • - 60 C

  • 80 W

  • 400 ns

  • 1000

  • 25 ns

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