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STB55NE06 Datasheet

  • STB55NE06

  • N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB55NE06
N - CHANNEL ENHANCEMENT MODE
鈥?SINGLE FEATURE SIZE鈩?鈥?POWER MOSFET
TYPE
ST B55NE06
s
s
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.022
鈩?/div>
I
D
55 A
s
TYPICAL R
DS(on)
= 0.019
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
HIGH dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique 鈥漇ingle Feature Size鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
D
2
PAK
TO-263
(suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
dv/dt
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Storage Temperature
Max. O perating Junction Temperature
o
o
Value
60
60
鹵
20
55
39
220
130
0.96
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
55 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/ C
V/ ns
o
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area
December 1997

STB55NE06 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 60 V

  • +/- 20 V

  • 55 A

  • 0.022 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-263

  • - 60 C

  • 130 W

  • 120 ns

  • 1000

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