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STB50NH02L Datasheet

  • STB50NH02L

  • N-CHANNEL 24V - 0.011ohm - 50A DPAK STripFET⑩ III POWER M...

  • 416.52KB

  • 11頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 24V - 0.011
鈩?/div>
- 50A D虜PAK
STripFET鈩?III POWER MOSFET
TYPE
STB50NH02L
s
s
s
s
s
s
s
STB50NH02L
V
DSS
24 V
R
DS(on)
< 0.0135
鈩?/div>
I
D
50 A
TYPICAL R
DS
(on) = 0.011
鈩?/div>
@ 10 V
TYPICAL R
DS
(on) = 0.015
鈩?/div>
@ 5 V
R
DS(ON)
* Qg INDUSTRY鈥檚 BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX 鈥淭4鈥?
3
1
D
虜
PAK
TO-263
(Suffix 鈥淭4鈥?
DESCRIPTION
The STB50NH02L utilizes the latest advanced design
rules of ST鈥檚 proprietary STripFET鈩?technology. This is
suitable fot the most demanding DC-DC converter
applications where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike(1)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(2)
P
tot
E
AS (3)
T
stg
T
j
Parameter
Drain-source Voltage Rating
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
30
24
24
鹵 20
50
36
200
60
0.4
200
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/擄C
mJ
擄C
September 2003
1/11

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