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STB4NC50 Datasheet

  • STB4NC50

  • N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩II MOSFET

  • 246.87KB

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB4NC50
N-CHANNEL 500V - 2.2鈩?- 4A D2PAK
PowerMesh鈩I MOSFET
TYPE
STB4NC50
s
s
s
s
s
V
DSS
500V
R
DS(on)
< 2.7鈩?/div>
I
D
4A
TYPICAL R
DS
(on) = 2.2
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
D虜PAK
3
1
DESCRIPTION
The PowerMESH
鈩?/div>
II is the evolution of the first
generation of MESH OVERLAY
鈩?
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
500
500
鹵30
4
2.5
12
80
0.64
3.5
鈥?5 to 150
150
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
(1)I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
July 2000
1/8

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