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STB45NF3LL Datasheet

  • STB45NF3LL

  • N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STri...

  • 11頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP45NF3LL - STP45NF3LLFP
STB45NF3LL
N-CHANNEL 30V - 0.014鈩?- 45A TO-220 - TO220FP - D
2
PAK
STripFET II鈩?POWER MOSFET
TYPE
STP45NF3LL
STP45NF3LLFP
STB45NF3LL
s
s
s
s
s
V
DSS
30 V
30 V
30 V
R
DS(on)
<0.018鈩?/div>
<0.018鈩?/div>
<0.018鈩?/div>
I
D
45 A
45 A
27 A
3
1
2
TYPICAL R
DS
(on) = 0.014鈩?@4.5V
OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
ADD SUFFIX 鈥淭4鈥?FOR ORDERING IN TAPE &
REEL
3
1
TO-220
3
1
2
D
2
PAK
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
鈥淪ingle Feature Size
鈩⑩€?/div>
strip-based process. The
resulting transistor shows the best trade-off be-
tween on-resistance ang gate charge. When used
as high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
TO-220/D
2
PAK
TO-220FP
30
30
鹵 16
45
32
180
70
0.46
241
--
鈥?55 to 175
(1) Starting T
j
= 25擄C, I
D
= 22.5A, V
DD
= 24V
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
E
AS
(1)
Viso
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
V
V
V
27
19
108
25
0.167
2500
A
A
A
W
W/擄C
mJ
V
擄C
1/11
(
q
) Pulse width limited by safe operating area
November 2002

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