鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥漈4鈥?
3
1
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequen-
cy isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
D
2
PAK
TO-263
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?
P
tot
E
AS
(
1
)
T
st g
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
o
Value
100
100
鹵
20
40
25
160
140
0.93
135
-65 to 175
175
(
1
)
starting T
j
= 25 C, I
D
=40A , V
DD
= 50V
o
Unit
V
V
V
A
A
A
W
W /
o
C
mJ
o
o
C
C
(鈥? Pulse width limited by safe operating area
May 2000
1/6