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STB40NF10L Datasheet

  • STB40NF10L

  • N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripF...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB40NF10L
N-CHANNEL 100V - 0.028鈩?- 40A D2PAK
LOW GATE CHARGE STripFET鈩?POWER MOSFET
TYPE
STB40NF10L
s
s
s
s
V
DSS
100 V
R
DS(on)
< 0.033
鈩?/div>
I
D
40 A
s
TYPICAL R
DS
(on) = 0.028鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX 鈥淭4鈥?FOR ORDERING IN TAPE &
REEL
3
1
D2PAK
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
E
AS
(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
100
100
鹵 15
40
25
160
150
1
430
鈥?5 to 175
175
(1) Starting T
j
= 25擄C, I
D
= 20A, V
DD
= 40V
Unit
V
V
V
A
A
A
W
W/擄C
mJ
擄C
擄C
(
q
) Pulse width limited by safe operating area
April 2001
1/9

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