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STB40NE03L-20 Datasheet

  • STB40NE03L-20

  • N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER...

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB40NE03L-20
N - CHANNEL ENHANCEMENT MODE
鈥?SINGLE FEATURE SIZE鈩?鈥?POWER MOSFET
TYPE
V
DSS
R
DS(on)
I
D
s
s
s
s
s
TYPICAL R
DS(on)
= 0.014
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE A 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique 鈥漇ingle Feature Size鈩?鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
to t
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
dv/dt(
1
)
T
st g
T
j
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction T emperature
o
o
o
D
2
PAK
TO-263
(suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
鹵
15
40
28
160
80
0.53
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
40 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
o
o
o
C
C
(鈥? Pulse width limited by safe operating area
November 1997
1/8

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