STB3NC90ZT4 Datasheet

IC型號(hào)：
STB3NC90ZT4
PDF描述：
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3.5A I(D) ...
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STB3NC90Z

N-CHANNEL 900V - 3.2鈩?- 3.5A D

PAK

Zener-Protected PowerMESH鈩?III MOSFET

TYPE

STB3NC90

DSS

900V

DS(on)

< 3.5鈩?/div>

3.5 A

TYPICAL R

(on) = 3.2鈩?/div>

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

PAK

DESCRIPTION

The third generation of MESH OVERLAY鈩?Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(

)

TOT

ESD(G-S)

dv/dt

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

= 25擄C

Drain Current (continuos) at T

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

= 25擄C

Derating Factor

Gate-source Current (*)

Gate source ESD(HBM-C=100pF, R=15K鈩?

Peak Diode Recovery voltage slope

Storage Temperature

Max. Operating Junction Temperature

Value

900

鹵

3.5

2.2

100

0.8

鹵50

2.5

鈥?5 to 150

150

(1)I

鈮?.5A,

di/dt

鈮?00A/碌s,

鈮?/div>

(BR)DSS

, T

鈮?/div>

JMAX

(*)

Limited only by maximum temperature allowed

Unit

W/擄C

V/ns

擄C

(鈥?Pulse width limited by safe operating area

May 2001

1/9

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STB3NC90ZT4 Datasheet

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