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STB3NB60 Datasheet

  • STB3NB60

  • N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOS...

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STB3NB60
N - CHANNEL 600V - 3.3鈩?- 3.3A - D
2
PAK/I
2
PAK
PowerMESH鈩?MOSFET
TYPE
STB3NB60
s
s
s
s
s
V
DSS
600 V
R
DS(on)
<3.6
鈩?/div>
I
D
3.3 A
TYPICAL R
DS(on)
= 3.3
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
D2PAK
TO-263
(Suffix 鈥漈4鈥?
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
dv/dt(
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
3
12
I2PAK
TO-262
(Suffix 鈥?1鈥?
INTERNAL SCHEMATIC DIAGRAM
Value
600
600
鹵
30
3.3
2.1
13.2
80
0.64
4.5
-65 to 150
150
(
1
) I
SD
鈮?.3A,
di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/ C
V/ ns
o
o
o
C
C
(鈥? Pulse width limited by safe operating area
June 1998
1/9

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