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STB36NF02L Datasheet

  • STB36NF02L

  • N-CHANNEL 20V - 0.016 ohm - 36A D2PAK LOW GATE CHARGE STripF...

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STB36NF02L
N-CHANNEL 20V - 0.016
鈩?/div>
- 36A D
2
PAK
LOW GATE CHARGE STripFET鈩?POWER MOSFET
PRELIMINARY DATA
T YPE
STB36NF02L
s
s
s
s
s
V
DSS
20 V
R
DS(on)
< 0.021
鈩?/div>
I
D
36 A
TYPICAL R
DS(on)
= 0.016
鈩?/div>
TYPICAL Q
g
= 19 nC @ 10V
OPTIMAL R
DS(on)
x Q
g
TRADE-OFF
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
3
1
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique 鈥漇ingle
Feature Size
鈩?/div>
鈥?strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
D
2
PAK
TO-263
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
20
20
鹵
20
36
25
144
75
0.5
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
October 1999
1/6

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