STB36NF02LT4 Datasheet

IC型號(hào)：
STB36NF02LT4
PDF描述：
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 36A I(D) | ...
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N-CHANNEL 20V - 0.016

鈩?/div>

- 36A D

PAK

LOW GATE CHARGE STripFET鈩?POWER MOSFET

TYPE

STB36NF02L

PRELIMINARY DATA

DSS

20 V

DS(on)

<0.021

鈩?/div>

36 A

TYPICAL R

(on) = 0.016

鈩?/div>

TYPICAL Qg = 19 nC @ 10V

OPTIMAL RDS(on) x Qg TRADE-OFF

CONDUCTION LOSSES REDUCED

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique 鈥淪ingle Feature

Size鈩?鈥?strip-based process. The resulting transistor

shows the best trade-off between on-resistance and gate

charge. When used as high and low side in buck

regulators, it gives the best performance in terms of both

conduction and switching losses. This is extremely

important for motherboards where fast switching and

high efficiency are of paramount importance.

PAK

TO-263

(suffix鈥淭4鈥?

ADD SUFFIX 鈥淭4鈥?FOR ORDERING IN TAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(鈥?

tot

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

= 25擄C

Drain Current (continuos) at T

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

= 25擄C

Derating Factor

Storage Temperature

Max. Operating Junction Temperature

Value

鹵20

144

0.5

鈥?5 to 175

175

Unit

W/擄C

擄C

(鈥?Pulse width limited by safe operating area

November 2000

This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.

1/6

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STB36NF02LT4 Datasheet

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