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- 30A D

2

PAK

LOW GATE CHARGE STripFET鈩?POWER MOSFET

TYPE

STB30NS15

s

STB30NS15

V

DSS

150 V

R

DS(on)

<0.1

鈩?/div>

I

D

30 A

s

TYPICAL R

DS

(on) = 0.075

鈩?/div>

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

3

1

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

D

2

PAK

TO-263

(Suffix 鈥淭4鈥?

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

(鈥?

P

tot

dv/dt

(1)

E

AS

(2)

T

stg

T

j

Parameter

Drain-source Voltage (V

GS

= 0)

Drain-gate Voltage (R

GS

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

C

= 25擄C

Drain Current (continuos) at T

C

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

C

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature

Value

150

鹵 20

30

21

120

110

0.73

2

250

-55 to 175

Unit

V

A

W

W/擄C

V/ns

mJ

擄C

鈥?

Pulse width limited by safe operating area.

October 2001

(1) I

SD

鈮?/div>

30A, di/dt

鈮?/div>

100A/碌s, V

DD

鈮?/div>

V

(BR)DSS

, T

j

鈮?/div>

T

JMAX.

(2) Starting T

j

= 25

o

C, I

D

= 15A, V

DD

= 25V

1/9

型號

版本

描述

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