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STB3015LT4 Datasheet

  • STB3015LT4

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | ...

  • 7頁(yè)

  • ETC

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N-CHANNEL 30V - 0.013
鈩?/div>
- 40A D
2
PAK/TO-220
STripFET鈩?POWER MOSFET
TYPE
STB3015L
STP3015L
s
s
s
s
STB3015L
STP3015L
PRELIMINARY DATA
V
DSS
30 V
30 V
R
DS(on)
<0.0155
鈩?/div>
<0.0155
鈩?/div>
I
D
40 A
40 A
s
TYPICAL R
DS
(on) = 0.013
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE A 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
D
2
PAK
TO-263
(suffix鈥淭4鈥?
1
2
3
TO-220
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique 鈥淪ingle Feature Size鈩⑩€?strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalance characteristics and less critical alignment steps
therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵20
40
28
160
80
0.53
7
鈥?5 to 175
175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
(1)I
SD
[
40 A, di/dt
m200A/ms,
V
DD
[
V
(BR)DSS
, Tj
[
T
JMA
November 2000
This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.
1/7

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