鈩?/div>
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
D虜PAK
3
12
3
I
虜
PAK
TO-247
Figure 2: Internal Schematic Diagram
2
1
DESCRIPTION
The
STP25NM60N
is realized with the second
generation of MDmesh Technology. This revolu-
tionary MOSFET associates a new vertical struc-
ture to the Company's strip layout to yield the
world's lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high ef-
ficiency converters
APPLICATIONS
The MDmesh鈩?II family is very suitable for in-
crease the power density of high voltage convert-
ers allowing system miniaturization and higher
efficiencies.
Table 2: Order Code
SALES TYPE
STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
STB25NM60N
MARKING
B25NM60N
F25NM60N
P25NM60N
W25NM60N
B25NM60N
PACKAGE
I虜PAK
TO-220FP
TO-220
TO-247
D虜PAK
PACKAGING
TUBE
TUBE
TUBE
TUBE
TAPE & REEL
Rev. 4
June 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
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