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STB22NS25Z Datasheet

  • STB22NS25Z

  • N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected ...

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP22NS25Z
STB22NS25Z
N-CHANNEL 250V - 0.13鈩?- 22A TO-220/D
2
PAK
Zener-Protected MESH OVERLAY鈩?MOSFET
TYPE
STP22NS25Z
STB22NS25Z
s
s
s
V
DSS
250 V
250 V
R
DS(on)
< 0.15
鈩?/div>
< 0.15
鈩?/div>
I
D
22 A
22 A
TYPICAL R
DS
(on) = 0.13
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
TO-220
3
1
2
3
1
D
2
PAK
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company鈥檚 proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
V
ESD(G-S)
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K鈩?
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
250
250
鹵 20
22
13.9
88
135
1.07
2500
5
鈥?5 to 150
(1) I
SD
鈮?2A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V
V/ns
擄C
(鈥?Pulse width limited by safe operating area
January 2002
1/10

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