鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
鈻?/div>
MOTOR CONTROL
鈻?/div>
DC-DC & DC-AC CONVERTERS
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
ADD SUFFIX 鈥淭4鈥?FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
鈩?/div>
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
75
75
鹵 20
20
14
80
80
0.53
10
350
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(
鈥?
Pulse width limited by safe operating area
(1) I
SD
鈮?/div>
20A, di/dt
鈮?/div>
200A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 10 A, V
DD
= 30V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
March 2004
1/9
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