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STB19NB20-1 Datasheet

  • STB19NB20-1

  • N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK Power...

  • 12頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP19NB20 - STP19NB20FP
STB19NB20-1
N-CHANNEL 200V - 0.15鈩?- 19A - TO-220/TO-220FP/I
2
PAK
PowerMESH鈩?MOSFET
TYPE
STP19NB20
STP19NB20FP
STB19NB20-1
s
s
s
s
s
V
DSS
200 V
200 V
200 V
R
DS(on)
< 0.18
鈩?/div>
< 0.18
鈩?/div>
< 0.18
鈩?/div>
I
D
19 A
10 A
19 A
3
1
2
TYPICAL R
DS
(on) = 0.15
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company鈥檚 proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
August 2002
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
I
2
PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
12
3
Value
STP(B)19NB20(-1)
200
200
鹵 30
19
12
76
125
1
5.5
-
鈥?5 to 150
150
(1)I
SD
鈮?9
A, di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
STP19NB20FP
V
V
V
10
6.0
76
35
0.28
2500
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
1/12
(鈥?Pulse width limited by safe operating area

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