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STB185N55 Datasheet

  • STB185N55

  • N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220

  • 12頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB185N55
STP185N55
N-channel 55V - 2.9m鈩?- 120A - D
2
PAK/TO-220
MDmesh鈩?low voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB185N55
STP185N55
V
DSS
55V
55V
R
DS(on)
3.5m鈩?/div>
3.8m鈩?/div>
I
D
120A
(1)
120A
(1)
3
1
2
1. Value limited by wire bonding
鈻?/div>
鈻?/div>
3
1
Ultra low on-resistance
100% avalanche tested
TO-220
D
2
PAK
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique 鈥渟ingle feature size鈩⑩€?/div>
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Internal schematic diagram
Applications
鈻?/div>
Switching application
鈥?Automotive
Order codes
Part number
STB185N55
STP185N55
Marking
B185N55
P185N55
Package
D
2
PAK
TO-220
Packaging
Tape & reel
Tube
August 2006
Rev 3
1/12
www.st.com
12
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

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