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STB180N55 Datasheet

  • STB180N55

  • N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM...

  • 11頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB180N55
STP180N55
N-CHANNEL 55V - 2.9m鈩?- 120A - D虜PAK - TO-220
MDmesh鈩?Low Voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB180N55
STP180N55
鈻?/div>
鈻?/div>
V
DSS
55V
55V
R
DS(on)
3.5m鈩?/div>
3.8m鈩?/div>
I
D
120A (Note 1)
120A (Note 1)
3
1
1
2
3
ULTRA LOW ON-RESISTANCE
100% AVALANCHE TESTED
D虜PAK
TO-220
Description
This N-Channel enhancement mode MOSFET is
the latest refinement of STMicroelectronic unique
鈥淪ingle Feature Size鈩⑩€?strip-based process with
less critical aligment steps and therefore a
remarkable manufacturing reproducibility. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and low gate charge
.
Internal schematic diagram
Applications
鈻?/div>
HIGH CURRENT SWITCHING APPLICATION
Order codes
Sales Type
STB180N55
STP180N55
Marking
B180N55
P180N55
Package
D虜PAK
TO-220
Packaging
TAPE & REEL
TUBE
January 2006
This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
Rev 1
1/11
www.st.com
11

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