鈥?/div>
strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
s
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(1)
I
D
I
DM
(
q
)
P
TOT
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵15
160
113
640
300
2
2
鈥?5 to 175
175
(1) Limited by Package
(2) I
SD
鈮?00A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
J
擄C
擄C
(
q
) Pulse width limi ted by safe operating area
February 2001
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