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STB13005 Datasheet

  • STB13005

  • HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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ST13005
STB13005-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
s
s
s
s
s
MEDIUM VOLTAGE CAPABILITY
NPN TRANSISTORS
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1鈥?
1
2
3
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
3
12
TO-220
I2PAK
TO-262
(Suffix 鈥?1鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
o
Value
700
400
9
4
8
2
4
75
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
January 1999
1/8

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