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STB12NK80Z-S Datasheet

  • STB12NK80Z-S

  • N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected Supe...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB12NK80Z-S
N-CHANNEL 800V - 0.65鈩?- 10.5A I
2
SPAK
Zener-Protected SuperMESH鈩ower MOSFET
TYPE
STB12NK80Z-S
s
s
s
s
s
s
V
DSS
800 V
R
DS(on)
< 0.75
鈩?/div>
I
D
10.5 A
Pw
190 W
TYPICAL R
DS
(on) = 0.65
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
12
I
2
SPAK
DESCRIPTION
The SuperMESH鈩?series is obtained through an
extreme optimization of ST鈥檚 well established strip-
based PowerMESH鈩?layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh鈩?products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
IDEAL FOR HIGH DENSITY LOW PROFILE
ADAPTERS
ORDERING INFORMATION
SALES TYPE
STB12NK80Z-S
MARKING
B12NK80Z
PACKAGE
I
2
SPAK
PACKAGING
TUBE
February 2004
1/9

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