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STB11NM60N Datasheet

  • STB11NM60N

  • N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK ...

  • 21頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD11NM60N-1 - STB11NM60N/-1
STD11NM60N-STP11NM60N-STF11NM60N
N-channel 600 V - 0.37
鈩?/div>
- 10 A - TO-220 - TO-220FP- I
2
PAK - IPAK
DPAK - D
2
PAK second generation MDmesh鈩?Power MOSFET
Features
Type
STB11NM60N-1
STB11NM60N
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
V
DSS
(@T
J
max)
650 V
650 V
650 V
650 V
650 V
650 V
R
DS(on)
max
0.45
鈩?/div>
0.45
鈩?/div>
0.45
鈩?/div>
0.45
鈩?/div>
0.45
鈩?/div>
0.45
鈩?/div>
I
D
1
2
3
3
3
2
1
1
10 A
10 A
10 A
10 A
10 A
(1)
10 A
TO-220
DPAK
IPAK
1. Limited only by maximum temperature allowed
鈻?/div>
鈻?/div>
鈻?/div>
3
12
3
1
1
3
2
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
I虜PAK
D虜PAK
TO-220FP
Figure 1.
Internal schematic diagram
Application
鈻?/div>
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh鈩?technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company鈥檚 strip layout to
yield one of the world鈥檚 lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
Device summary
Marking
B11NM60N
11NM60N
D11NM60N
D11NM60N
P11NM60N
F11NM60N
Rev 4
Package
I虜PAK
D虜PAK
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape and reel
Tube
Tape and reel
Tube
Tube
1/21
www.st.com
21
Order codes
STB11NM60N-1
STB11NM60N
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
March 2008

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