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STB10NA40 Datasheet

  • STB10NA40

  • N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

  • 129.54KB

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB10NA40
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STB10NA40
n
n
n
n
n
n
n
n
V
DSS
400 V
R
DS(on )
< 0.55
鈩?/div>
I
D
10 A
n
TYPICAL R
DS(on)
= 0.46
鈩?/div>
鹵
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1鈥?
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX 鈥漈4鈥?
3
12
1
3
I2PAK
TO-262
D2PAK
TO-263
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Fact or
Storage Temperature
Max. O perating Junction Temperature
o
o
Valu e
400
400
鹵
30
10
6.3
40
125
1
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
October 1995
1/10

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