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START540TR Datasheet

  • START540TR

  • NPN Silicon RF Transistor

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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START540
NPN Silicon RF Transistor
鈥?/div>
LOW NOISE FIGURE: NFmin = 0.9dB
@ 1.8GHz, 5mA, 2V
鈥?/div>
HIGH OUTPUT IP3 = 24dBm
@ 1.8GHz, 20mA, 2V
鈥?/div>
GOOD RUGGEDNESS BVceo = 4.5V
鈥?/div>
TRANSITION FREQUENCY 45GHz
鈥?/div>
ULTRA MINIATURE SOT343 PACKAGE
SOT343 (SC70)
ORDER CODE
START540TR
BRANDING
540
DESCRIPTION
The START540 is a member of the START family
that provide the market with the state of the art of RF
silicon process. Manufacturated in the third
generation of ST proprietary bipolar process, it
offers the highest linearity with excellent Noise
Figure for 4.5V breakdown voltage(BVceo).
It reaches performance level only achieved with
GaAs products before.
APPLICATIONS
鈥?/div>
LNA FOR GSM/DCS, DECT, PDC, PCS,
PCN, CDMA, W-CDMA
鈥?/div>
GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol
V
ceo
V
cbo
V
ebo
I
c
I
b
P
tot
T
stg
T
j
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total dissipation, T
s
=
101
Storage temperature
Max. operating junction temperature
Parameter
Value
4.5
15
1.5
40
4
180
-65 to 150
150
Unit
V
V
V
mA
mA
mW
o
C
o
C
ABSOLUTE MAXIMUM RATINGS
R
thjs
Thermal Resistance Junction soldering point
270
o
C/W
July, 3 2002
1/7

START540TR 產(chǎn)品屬性

  • STMicroelectronics

  • 射頻雙極小信號晶體管

  • Single

  • NPN

  • 4.5 V

  • 1.5 V

  • 0.04 A

  • 180 mW

  • + 150 C

  • SOT-323-4

  • Reel

  • 100

  • SMD/SMT

  • 3000

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