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START450TR Datasheet

  • START450TR

  • NPN Silicon RF Transistor

  • 73.15KB

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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START450
NPN Silicon RF Transistor
鈥?/div>
COMPRESSION POINT P1dB=19dBm @ 1.8GHz
鈥?/div>
TRANSITION FREQUENCY 42GHz
鈥?/div>
HIGH LINEARITY
鈥?/div>
ULTRA MINIATURE SOT343(SC70) PACKAGE
SOT343 (SC70)
ORDER CODE
START450TR
BRANDING
450
DESCRIPTION
The START450 is a member of the START family that
provide the state of the art of RF silicon process to the
market. Manufacturated in the third generation of ST
proprietary bipolar process, it offers the best mix of
gain and NF for given breakdown voltage(BVceo).
It offers performance level only archived with GaAs
products before.
APPLICATIONS
鈥?/div>
LNA FOR GSM/DCS, DECT, PCS, PCN,
CDMA, W-CDMA
鈥?/div>
PREDRIVER FOR DECT
鈥?/div>
GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol
V
ceo
V
cbo
V
ebo
I
c
I
b
P
tot
T
stg
T
j
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total dissipation, T
s
=
TBD
Storage temperature
Max. operating junction temperature
Parameter
Value
4.5
15
1.5
100
10
450
-65 to 150
150
Unit
V
V
V
mA
mA
mW
o
C
o
C
ABSOLUTE MAXIMUM RATINGS
R
thjs
Thermal Resistance Junction soldering point
MAX
鈮?/div>
120
o
C/W
November, 20 2002
1/7

START450TR 產(chǎn)品屬性

  • STMicroelectronics

  • 射頻雙極小信號晶體管

  • Single

  • NPN

  • 42000 MHz

  • 4.5 V

  • 1.5 V

  • 100 mA

  • 450 mW

  • + 150 C

  • SOT-323-4

  • Reel

  • 160

  • 160

  • SMD/SMT

  • 3000

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