1A 4 circuits Triac Array
STA221A
s
Features
q
1A 4 Triacs combined one package
q
Repetitive peak off-state voltage: V
DRM
=400V
q
RMS on-state current: I
T(RMS)
=1A
q
Gate trigger current: I
GT
=3mA max (MODE , ,
11.3
鹵
0.2
2.3
鹵
0.2
External Dimensions
(Unit: mm)
25.25
鹵
0.2
4.0
鹵
0.2
9.0
鹵
0.2
a
b
4.7
鹵
0.5
)
0.5
鹵
0.15
1.0
鹵
0.25
9
!
2.54=22.86
鹵
0.25
C1.5
鹵
0.5
(2.54)
0.5
鹵
0.15
1.2
鹵
0.2
3
TR
1
2
1
5
TR
2
4
7
TR
3
6
9
TR
4
8
10
1
2
3
4
5
6
7
8
9
10
T
1
G
T
2
G
T
2
G
T
2
G T
2
T
1
a. Part Number
b. Lot Number
Weight: Approx. 2.6g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak forward gate voltage
Peak forward gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
Ratings
400
1.0
10
6
0.5
1.0
0.1
鈥?40 to
+
125
鈥?40 to
+
125
Unit
V
A
A
V
A
W
W
擄C
擄C
Conditions
鈥?40擄C to +125擄C
Conduction angle 360擄, Tc=97擄C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125擄C
f
f
f
50Hz, duty
50Hz, duty
50Hz, duty
10%
10%
10%
sElectrical
Characteristics
Parameter
Off-state current
On-state voltage
Symbol
I
DRM
V
TM
Ratings
min
typ
0.1
max
1.0
0.1
1.6
1.7
3.5
1.2
1.2
3.0
3.0
3.0
0.7
0.8
2.0
2.0
1.8
2.3
13.0
0.1
20
80
Unit
mA
V
Conditions
V
D
=V
DRM
, R
GK
=
鈭?/div>
, Tj=125
擄C
I
TM
=1.6A,
Tc=25
擄C
T
2
, G
+
+
鈥?/div>
鈥?/div>
+
鈥?/div>
V
D
=V
DRM
, R
GK
=
鈭?/div>
, Tj=25
擄C
Gate trigger voltage
V
GT
V
V
D
=6V,
R
L
=10鈩?
T
C
=25
擄C
T
2
, G
T
2
, G
T
2
, G
+
+
鈥?/div>
鈥?/div>
鈥?/div>
+
+
鈥?/div>
T
2
, G
mA
V
D
=6V,
R
L
=10鈩?
T
C
=25
擄C
T
2
, G
T
2
, G
T
2
, G
V
擄C/W
V
D
=1/2脳V
DRM
, Tj=125
擄C
Junction to Lead, 1 element operation
Gate trigger current
I
GT
鈥?/div>
+
Gate non-trigger voltage
Thermal resistance
V
GD
I
H
Rth
junction to operating environment, 1 element operation
64
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