ST93CS66
ST93CS67
4K (256 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
鈥?3V to 5.5V for the ST93CS66
鈥?2.5V to 5.5V for the ST93CS67
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS66 and ST93CS67 are replaced by
the M93S66
8
1
PSDIP8 (B)
0.25mm Frame
14
1
SO14 (ML)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93CS66 and ST93CS67 are 4K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON鈥檚 High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 4K bit memory is organized as 256 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
Table 1. Signal Names
S
D
Q
C
PRE
W
V
CC
V
SS
Chip Select Input
Serial Data Input
Serial Data Output
Serial Clock
Protect Enable
Write Enable
Supply Voltage
Ground
VCC
D
C
S
PRE
W
ST93CS66
ST93CS67
Q
VSS
AI00906B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
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