廬
ST93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
s
s
s
s
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The ST93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the ST83003, its
complementary NPN transistor.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= -0.75 A,
Collector Current
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
t
p
< 10碌s, T
j
< 150 C)
-1.5
-3
-0.75
-1.5
40
-65 to 150
150
A
A
A
A
W
o
o
o
Value
-500
-400
V
(BR)EBO
Unit
V
V
V
Collector Peak Current (t
p
< 5 ms)
C
C
October 2002
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