ST5771-1
Discrete POWER & Signal
Technologies
ST5771-1
C
BE
TO-92
PNP Switching Transistor
This device is designed for high speed saturated switching
applications at currents to 100mA. Sourced from Process 65.
See PN4258 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
15
15
4.5
200
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
ST5771-1
350
2.8
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
漏
1997 Fairchild Semiconductor Corporation
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