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ST2301 Datasheet

  • ST2301

  • P Channel Enchancement Mode MOSFET

  • 6頁

  • STANSON

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P Channel Enchancement Mode MOSFET
-2.8A
DESCRIPTION
ST2301
The ST2301 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
FEATURE
-
20V/-2.8A, R
DS(ON)
= 120m-ohm
D
G
1
1.Gate
2.Source
S
2
3.Drain
@VGS = -4.5V
-20V/-2.0A, R
DS(ON)
= 170m-ohm
@VGS = -2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
S01YA
1
2
A: Process Code
S: Subcontractor Y: Year Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1

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