廬
ST2009DHI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
NEW SERIES, ENHANCED PERFORMANCE
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
INTEGRATED FREE WHEELING DIODE
HIGH VOLTAGE CAPABILITY
HIGH SWITCHING SPEED
TIGTHER hfe CONTROL
IMPROVED RUGGEDNESS
2
1
3
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOR
TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
R
BE
=35
鈩?/div>
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
V
isol
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Total Dissipation at T
c
= 25 C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
o
Value
1500
600
7
10
20
7
55
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
o
o
C
C
December 2002
1/6
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