廬
ST13007N
ST13007NFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
s
s
s
s
HIGH VOLTAGE CAPABILITY
NPN TRANSISTOR
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance
switching speeds.
1
2
3
1
2
3
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
ST13007N
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
鈮?/div>
25 C
Storage T emperature
Max. O perating Junction Temperature
o
Value
ST13007NF P
700
400
9
8
16
4
8
80
-65 to 150
150
33
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
March 1999
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