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SSW1N60ATM Datasheet

  • SSW1N60ATM

  • Power Field-Effect Transistor, N-Channel, Metal-oxide Semico...

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
碌A(chǔ)
(Max.) @ V
DS
= 600V
Low R
DS(ON)
: 9.390
鈩?/div>
(Typ.)
SSW/I1N60A
BV
DSS
= 600 V
R
DS(on)
= 12
鈩?/div>
I
D
= 1 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C )
Continuous Drain Current (T
C
=100 C )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C ) *
Total Power Dissipation (T
C
=25 C )
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
o
o
2
O
1
O
1
O
3
O
o
o
Value
600
1
0.6
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
3
+ 30
_
44
1
3.4
3.0
3.1
34
0.27
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
胃
JC
R
胃
JA
R
胃
JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.67
40
62.5
o
Units
C /W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
漏1999 Fairchild Semiconductor Corporation

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