鈩?/div>
I
D
= 1.7 A
I-PAK
1
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
C)
Continuous Drain Current (T
C
=100
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
300
- 55 to +150
螣
螣
螣
螣
Value
900
1.7
1.1
1
O
2
O
1
O
1
O
3
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
螣
6.8
+ 30
_
214
1.7
4.5
1.5
45
0.36
C
Thermal Resistance
Symbol
R
胃
JC
R
胃
JA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.78
110
Units
螣
C
/W
Rev. B
漏1999 Fairchild Semiconductor Corporation