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SST39VF512-90-4C-U4 Datasheet

  • SST39VF512-90-4C-U4

  • EEPROM

  • 22頁(yè)

  • ETC

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
FEATURES:
鈥?Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
鈥?Single Voltage Read and Write Operations
鈥?3.0-3.6V for SST39LF512/010/020/040
鈥?2.7-3.6V for SST39VF512/010/020/040
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption:
鈥?Active Current: 10 mA (typical)
鈥?Standby Current: 10 碌A(chǔ) (typical)
鈥?Sector-Erase Capability
鈥?Uniform 4 KByte sectors
鈥?Fast Read Access Time:
鈥?45 ns for SST39LF512/010
鈥?55 ns for SST39LF020/040
鈥?70 and 90 ns for SST39VF512/010/020/040
鈥?Latched Address and Data
鈥?Fast Erase and Byte-Program:
鈥?Sector-Erase Time:18 ms typical
鈥?Chip-Erase Time: 70 ms typical
鈥?Byte-Program Time: 14 碌s typical
鈥?Chip Rewrite Time:
1 second typical for SST39LF/VF512
2 seconds typical for SST39LF/VF010
4 seconds typical for SST39LF/VF020
8 seconds typical for SST39LF/VF040
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End-of-Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?CMOS I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?32-Pin PLCC
鈥?32-Pin TSOP (8mm x14mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8
CMOS Multi-Purpose Flash (MPF) manufactured with
SST鈥檚 proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick oxide
tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST39LF512/010/020/040 devices write (Program
or Erase) with a 3.0-3.6V power supply. The
SST39VF512/010/020/040 devices write with a 2.7-3.6V
power supply. The devices conform to JEDEC standard
pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST39LF512/010/020/040 and SST39VF512/010/020/
040 devices provide a maximum Byte-Program time of
20 碌sec. These devices use Toggle Bit or Data# Polling
to indicate the completion of Program operation. To
protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes. De-
signed, manufactured, and tested for a wide spectrum of
applications, they are offered with a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 devices are suited for applications that require
convenient and economical updating of program, con-
figuration, or data memory. For all system applications,
漏 2000 Silicon Storage Technology, Inc.
395-2 8/00
they significantly improves performance and reliability,
while lowering power consumption. They inherently use
less energy during Erase and Program than alternative
flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed
during any Erase or Program operation is less than
alternative flash technologies. These devices also im-
prove flexibility while lowering the cost for program, data,
and configuration storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of Erase/
Program cycles that have occurred. Therefore the sys-
tem software or hardware does not have to be modified
or de-rated as is necessary with alternative flash tech-
nologies, whose Erase and Program times increase with
accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39LF512/
010/020/040 and SST39VF512/010/020/040 devices are
offered in 32-pin TSOP and 32-pin PLCC packages. See
Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
device using standard microprocessor write sequences.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
1

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