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SST29VE010 Datasheet

  • SST29VE010

  • 1 Mbit (128K x8) Page-Mode EEPROM

  • 26頁(yè)

  • SST   SST

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1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories
Data Sheet
FEATURES:
鈥?Single Voltage Read and Write Operations
鈥?5.0V-only for SST29EE010
鈥?3.0-3.6V for SST29LE010
鈥?2.7-3.6V for SST29VE010
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption
鈥?Active Current: 20 mA (typical) for 5V and 10 mA
(typical) for 3.0/2.7V
鈥?Standby Current: 10 碌A(chǔ) (typical)
鈥?Fast Page-Write Operation
鈥?128 Bytes per Page, 1024 Pages
鈥?Page-Write Cycle: 5 ms (typical)
鈥?Complete Memory Rewrite: 5 sec (typical)
鈥?Effective Byte-Write Cycle Time: 39 碌s (typical)
鈥?Fast Read Access Time
鈥?5.0V-only operation: 70 and 90 ns
鈥?3.0-3.6V operation: 150 and 200 ns
鈥?2.7-3.6V operation: 200 and 250 ns
鈥?Latched Address and Data
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End of Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?Hardware and Software Data Protection
鈥?Product Identification can be accessed via
Software Operation
鈥?TTL I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?32-lead PLCC
鈥?32-lead TSOP (8mm x 14mm, 8mm x 20mm)
鈥?32-pin PDIP
PRODUCT DESCRIPTION
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST鈥檚 proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE010 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE010 provide a typical Byte-Write time of 39 碌sec. The
entire memory, i.e., 128 KBytes, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/LE/VE010 have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, the
SST29EE/LE/VE010 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST29EE/LE/VE010 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST29EE/LE/VE010 significantly improve performance
and reliability, while lowering power consumption. The
SST29EE/LE/VE010 improve flexibility while lowering the
cost for program, data, and configuration storage applica-
tions.
To meet high density, surface mount requirements, the
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE010 does not require
separate Erase and Program operations. The internally
timed write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE010 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE010 are compatible with industry standard EEPROM
pinouts and functionality.
漏2001 Silicon Storage Technology, Inc.
S71061-07-000 6/01
304
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

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