鈥?Ultra-High Speed Switching鈥?/div>
tON
: 1 ns
鈥?Ultra-Low Reverse Capacitance: 0.2 pF
鈥?Low Guaranteed
rDS
@5 V
鈥?Low Turn-On Threshold Voltage
鈥?N-Channel Enhancement Mode
Benefits
鈥?High-Speed System Performance
鈥?Low Insertion Loss at High Frequencies
鈥?Low Transfer Signal Loss
鈥?Simple Driver Requirement
鈥?Single Supply Operation
Applications
鈥?Fast Analog Switch
鈥?Fast Sample-and-Holds
鈥?Pixel-Rate Switching
鈥?DAC Deglitchers
鈥?High-Speed Driver
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for 鹵10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and
鹵
voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array鈥擲D5000/5400 series, and
Zener protected鈥擲D211DE/SST211 series.
Top View
SD210DE SD214DE
Top View
SST210 SST214
Absolute Maximum Ratings (T
A
= 25
0
C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage .........................................................
鹵
40 V
Gate-Substrate Voltage .........................................................................
鹵
30 V
Drain-Source Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 20 V
Source-Drain Voltage
(SD210DE) ....................................... 10 V
(SD214DE) ....................................... 20 V
Drain-Substrate Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 25 V
Source-Substrate Voltage
(SD210DE) ....................................... 15 V
(SD214DE) ....................................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) ............................. 300
0
C
Storage Temperature .................................................................... -65 to 150
0
C
Operating Junction Temperature ................................................. -55 to 125
0
C
Power Dissipation
a ....................................................................................................................................
300 mW
Notes:
a. Derate 3 mW/
0
C above 25
0
C
Linear Integrated Systems
鈥?4042 Clipper Court 鈥?Fremont, CA 94538 鈥?Tel: 510 490-9160 鈥?Fax: 510 353-0261
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