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WLAN (IEEE 802.11a/g/b)
Japanese WLAN
HyperLAN2
Multimedia
Home RF
Cordless phones
PRODUCT DESCRIPTION
The SST13LP05 is a fully matched, dual-band power
amplifier module (PAM) based on the highly-reliable InGaP/
GaAs HBT technology. This PAM provides excellent RF
performance, temperature-stable power detectors, and
low-current analog on/off control interfaces. The
SST13LP05 provides stable RF and power detector perfor-
mance over a large V
CC
power supply variation, with an
ultra-low shut-down current.
With a near-zero Rest of Bill of Materials (RBOM), the
SST13LP05 is designed for 802.11a/b/g applications cov-
ering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for
U.S., European, and Japanese markets.
The SST13LP05 has excellent linearity, typically 4% added
Error Vector Magnitude (EVM) at 19 dBm output power.
This output power is essential for 54 Mbps 802.11g opera-
tion while meeting 802.11g spectrum mask at 23 dBm and
802.11b spectrum mask at 23.5 dBm. For 802.11a opera-
tion, the SST13LP05 typically demonstrates <4% added
EVM at 18 dBm output power while meeting 802.11a spec-
trum mask at 22.5 dBm.
The SST13LP05 also has wide-range (>20 dB), tempera-
ture-stable (鹵0.5 dB across 0擄C to +85擄C), directionally-
coupled, power detectors which provide a reliable and cost-
effective solution to board-level power control. The device鈥檚
analog on/off control can be driven by an analog or digital
control signal from either a transceiver or baseband chip.
These features, coupled with low operating current, make
the SST13LP05 ideal for the final stage power amplifica-
tion in both battery-powered 802.11a/b/g WLAN trans-
mitters and access point applications.
The SST13LP05 is offered in a 16-contact LGA package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
漏2006 Silicon Storage Technology, Inc.
S71318-00-000
12/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.