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SST13LP01-QDF-K Datasheet

  • SST13LP01-QDF-K

  • 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

  • 377.27KB

  • 27頁(yè)

  • SST   SST

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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP01
SST13LP012.4 GHz / 5 GHz Dual-Band Power Amplifier
Preliminary Specifications
FEATURES:
鈥?High Gain:
鈥?Typically 28 dB gain across 2.4-2.5 GHz over
temperature 0擄C to +85擄C
鈥?Typically 30-33 dB gain across 4.9-5.8 GHz over
temperature 0擄C to +85擄C
鈥?High linear output power:
鈥?>29 dBm P1dB across 2.4-2.5 GHz
(Exceeding maximum rating of average output
power, never measure with CW source! Pulsed
single-tone source with <50% duty cycle is rec-
ommended.)
鈥?Meets 802.11g OFDM ACPR requirement up to
23 dBm
鈥?Added EVM~4% up to 21 dBm for
54 Mbps 802.11g signal
鈥?Meets 802.11b ACPR requirement up to 23 dBm
鈥?~28 dBm P1dB (Pulsed single-tone signal)
across 4.9~5.8 GHz
鈥?Meets 802.11a OFDM ACPR requirement up to
22 dBm over whole band
鈥?Added EVM~4% up to 20 dBm for
54 Mbps 802.11a signal
鈥?High power-added efficiency/Low operating
current for both 802.11a/b/g applications
鈥?~24%/250 mA @ P
OUT
= 23 dBm for 802.11g
鈥?~23%/260 mA @ P
OUT
= 23 dBm for 802.11b
鈥?~9.5%/320 mA @ P
OUT
= 20 dBm for 802.11a
鈥?Built-in Ultra-low I
REF
power-up/down control
鈥?I
REF
<3 mA
鈥?Low idle current
鈥?~70 mA I
CQ
(802.11b/g)
鈥?~170 mA I
CQ
(802.11a)
鈥?High-speed power-up/down
鈥?Turn on/off time (10%~90%) <100 ns
鈥?Typical power-up/down delay with driver delay
included <200 ns
鈥?High temperature stability
鈥?~1 dB gain/power variation between 0擄C to +85擄C
across 2.4~2.5 GHz
鈥?~3.5/1.5 dB gain/max linear power variation
between 0擄C to +85擄C across 4.9~5.8 GHz
鈥?~1 dB detector variation over 0擄C to +85擄C
鈥?Low shut-down current (< 0.1 碌A(chǔ))
鈥?On-chip power detection
鈥?20 dB dynamic range on-chip power detection
鈥?Simple input/output matching
鈥?Packages available
鈥?24-contact WQFN (4mm x 4mm)
鈥?Non-Pb (lead-free) packages available
APPLICATIONS:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
WLAN (IEEE 802.11a/g/b)
Japanese WLAN
HyperLAN2
Multimedia
Home RF
Cordless phones
PRODUCT DESCRIPTION
The SST13LP01 is a high-gain, high-performance, dual-
band power amplifier IC based on the highly-reliable
InGaP/GaAs HBT technology.
The SST13LP01 device can be easily configured for high-
power applications with superb power-added efficiency
while operating over the 802.11a/b/g frequency band for
U.S., European, and Japanese markets (2.4-2.5 GHz and
4.9-5.8 GHz.
The SST13LP01 has excellent linearity, typically ~4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 23 dBm and 802.11b spectrum mask at 23
dBm. For 802.11a operation, the SST13LP01 has demon-
strated typically ~4% added EVM at 20 dBm output power
while meeting 802.11a spectrum mask at 22 dBm. The
漏2005 SST Communications Corp.
S71287-00-000
11/05
1
SST13LP01 also has wide-range (>20 dB), temperature-
stable (~1 dB over 85擄C), single-ended/differential power
detectors which lower users鈥?cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control.
Ultra-low reference current (total I
REF
<3 mA) makes the
SST13LP01 controllable by an on/off switching signal
directly from the baseband chip. These features, coupled
with low operating current, make the SST13LP01 ideal
for the final stage power amplification in both battery-
powered 802.11a/b/g WLAN transmitter and access
point applications.
The SST13LP01 is offered in a 24-contact WQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

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