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SSS1N60B Datasheet

  • SSS1N60B

  • 600V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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SSP1N60B/SSS1N60B
November 2001
SSP1N60B/SSS1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
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1.0A, 600V, R
DS(on)
= 12鈩?@V
GS
= 10 V
Low gate charge ( typical 5.9 nC)
Low Crss ( typical 3.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
SSP1N60B
600
1.0
0.6
3.0
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
SSS1N60B
1.0 *
0.6 *
3.0 *
50
1.0
3.4
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
34
0.27
-55 to +150
300
17
0.13
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP1N60B
3.67
0.5
62.5
SSS1N60B
7.48
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A, November 2001

SSS1N60B 產(chǎn)品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N-Channel

  • 600 V

  • +/- 30 V

  • 1 A

  • 0.97 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220F

  • Tube

  • 35 ns

  • 0.97 S

  • - 55 C

  • 17 W

  • 45 ns

  • 50

  • 25 ns

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