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SSP6N80A Datasheet

  • SSP6N80A

  • Advanced Power MOSFET

  • 7頁(yè)

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
碌A(chǔ)
(Max.) @ V
DS
= 800V
Low R
DS(ON)
: 1.472
鈩?/div>
(Typ.)
1
2
3
SSP6N80A
BV
DSS
= 800 V
R
DS(on)
= 2.0
鈩?/div>
I
D
= 6 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
C
)
Continuous Drain Current (T
C
=100
C
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
C
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
螣
螣
螣
Value
800
6
3.8
1
O
2
O
1
O
1
O
3
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
螣
24
+ 30
_
480
6
16
2.0
160
1.28
- 55 to +150
螣
C
300
Thermal Resistance
Symbol
R
R
R
胃
JC
胃
CS
胃
JA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.78
--
62.5
Units
螣
C
/W
Rev. B
漏1999 Fairchild Semiconductor Corporation

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