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SSP10N60A Datasheet

  • SSP10N60A

  • Advanced Power MOSFET

  • 362.40KB

  • 7頁(yè)

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
碌A(chǔ)
(Max.) @ V
DS
= 600V
Low R
DS(ON)
: 0.646
鈩?/div>
(Typ.)
SSP10N60A
BV
DSS
= 600 V
R
DS(on)
= 0.8
鈩?/div>
I
D
= 9 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 鈥?from case for 5-seconds
2
O
1
O
1
O
3
O
Value
600
9
5.7
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ C
o
36
+
30
_
442
9
15.6
3.0
156
1.25
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
R
胃
JC
胃
CS
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
o
C /W
R
胃
JA
Rev. B
漏1999 Fairchild Semiconductor Corporation

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