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SSN1N45B Datasheet

  • SSN1N45B

  • 450V N-Channel MOSFET

  • 668.98KB

  • 8頁(yè)

  • FAIRCHILD

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SSN1N45B
SSN1N45B
450V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic ballasts based on half bridge
configuration.
Features
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0.5A, 450V, R
DS(on)
= 4.25鈩?@V
GS
= 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical 6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage
鹵
50V guaranteed
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G
!
TO-92
GDS
SSN Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
SSN1N45B
450
0.5
0.32
4.0
鹵
50
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C)
Power Dissipation (T
L
= 25擄C)
108
0.5
0.25
5.5
0.9
2.5
0.02
-55 to +150
300
T
J
, T
stg
T
L
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JL
R
胃JA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
Typ
--
--
Max
50
140
Units
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A, November 2002

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